1.3 kV Reverse-Blocking AlGaN/GaN MISHEMT With Ultralow Turn-On Voltage 0.25 V

A reverse-blocking AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (RB-MISHEMT) is proposed and fabricated. Compared with the conventional MISHEMT ohmic drain, device features a hybrid Schottky-ohmic drain low work function Tungsten (W), based on which state-of-the-art ultralow turn-on voltage ( ${V} _{\mathrm{ on}}$ ) of 0.25 V could be realized without degradation in on-state characteristics. In addition, fabricated RB-MISHEMT exhibits excellent reverse blocking ?1332 (at GS}}= 0$ V) forward 1315 GS}} = -15$ specific on-resistance notation="LaTeX">${R} on,sp}}$ 3.5 notation="LaTeX">$\text{m}\Omega $ cm 2 , leading highest power figure-of-merit (FOM) > 494 MW/cm . The good thermal stability also observed RB-MISHEMT. corresponding operation mechanism are revealed by Silvaco ATLAS simulations. These results demonstrate great potential electronics applications.